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  5. Resonant Tunneling and Planar Gunn Diodes A Comparison of Two Solid State Sources for Terahertz Tech

Resonant Tunneling and Planar Gunn Diodes A Comparison of Two Solid State Sources for Terahertz Tech

来源 :The 7th UK/Europe-China Workshop on Millimeter Waves and Ter | 被引量 : 0次 | 上传用户：girl_wang
【摘 要】
：
The demand for higher frequency applications is growing and a solid-state source for THz frequencies is needed.We compare experimentally demonstrated results of resonant tunnelling diode and planar Gu
【作 者】
：
Ata Khalid Jue Wang Afesomeh Ofiare Khalid Alharbi David Cumming Edward Wasige 
【机 构】
：
School of Engineering,University of Glasgow Oakfied Avenue,Glasgow,United Kindom
【出 处】
：
The 7th UK/Europe-China Workshop on Millimeter Waves and Ter
【发表日期】
：
2014年4期
【关键词】
：
Terahertz soli-state source Resonant Tunnelling Diode Planar Gunn Diode 
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　　The demand for higher frequency applications is growing and a solid-state source for THz frequencies is needed.We compare experimentally demonstrated results of resonant tunnelling diode and planar Gunn diodes for terahertz technology.The highest power demonstrated for W-band RTD oscillators at 75.2 GHz with-0.2 dBm(0.96 mW)and at 300GHz for submicron planar Gunn with-16dBm(28μW)are compared as the potential solid-state source for Terahertz applications.
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