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5. Gate Controlled Spin-Orbit Interaction In InGaAs/InAs Heterostructure

Gate Controlled Spin-Orbit Interaction In InGaAs/InAs Heterostructure

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：sadlyiwas

【摘 要】

：

The current semiconductor scaling technology is expected to end in the next decade.It is urgent to develop a new scheme of semiconductor device.Spin,an intrinsic quantum property,plays a key role in t

【作 者】

：

Che-Wei Chang Chin-Hung Chen Ju-Chun Fan G.Creeth I.Farrer D.A.Ritchie T.-M.Chen 

【机 构】

：

Department of Physics,National Cheng Kung University,Tainan 701,Taiwan

【出 处】

：

2015台湾物理年会

【发表日期】

：

2015年5期

【关键词】

：

spin-orbit interaction magnetic focusing weak antilocalization InGaAs/InAs 

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　　The current semiconductor scaling technology is expected to end in the next decade.It is urgent to develop a new scheme of semiconductor device.Spin,an intrinsic quantum property,plays a key role in the nextgeneration semiconductor device.

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