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5. Improved electrical properties in AlGaN/GaN heterostructures using AIN/GaN/AIN quantum well as chann

Improved electrical properties in AlGaN/GaN heterostructures using AIN/GaN/AIN quantum well as chann

来源 :The 2nd International Syposium on Innovations in Advanced Ma | 被引量 : 0次 | 上传用户：nmghdw126com

【作 者】

：

S.Zhang Z.H.Feng J.Y.Yin B.Liu Z.Feng M.C.Li L.C.Zhao 

【机 构】

：

National Key Lab.Of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang,China;School of Materia

【出 处】

：

The 2nd International Syposium on Innovations in Advanced Ma

【发表日期】

：

2008年1期

【关键词】

：

GaN HEMT Mobility Quantum well 

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