Computer Modeling of Inductively Coupled Plasmas Plasma Chemistry and Feature Profile Simulations fo

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:xyxyxyxyxy999
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In this talk,we will explain how to model etching and deposition processes for electronic device fabrication,as applied in Shallow Trench Isolation (STI) and the simulation results will be compared to experimental data.
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