【摘 要】
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In this poster we present the electron beam heating technique – a technique that is capable of profiling the thermal resistance along a single nanowire wit
【机 构】
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DepartmentofPhysicsandCentreforComputationalScienceandEngineering,NationalUniversityofSingapore,Sing
【出 处】
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The 2nd International Conference on Phononics and thermal En
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In this poster we present the electron beam heating technique – a technique that is capable of profiling the thermal resistance along a single nanowire with a spatial resolution of better than 20 nm1.The working principle and experimental set-up of this technique are presented,followed by several research findings using this technique,such as the spatially resolved thermal conductivity along a Si0.7Ge0.3/NiSi0.7Ge0.3 heterostructured nanowire,and the interfacial thermal resistance(ITR) across the Si/NiSi2 interface embedded in a Si/NiSi2 heterostructured nanowire.In the latter part,we found that the ITR does not change even for adjacent interfaces as close as 50 atomic layers.
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