As a complementary material to zero-bandgap graphene,two-dimensional(2D)transition-metal dichalcogenides(TMD)with sizable bandgaps have attracted broad interests.
Two-dimensional atomic crystals have attracted most of the attention of researchers due to their potential applications in electrical and optical devices.
Transition-metal dichalcogenides(TMDs),such as MoS2,MoSe2,WS2,and WSe2,have recently attracted considerable interest as a new class of atomically thin 2D layered materials(2DLMs),due to their atomical
Individual monolayer of Tungsten Disulfide(WS2)is atomically thin two-dimensional crystals with attractive physical properties different from those of their bulk counterparts.
Neuroeletrical and neurochemical signals are two major tools which used by nervous system to transmit and process neural information.It is expected to obtain more comprehensive knowledge by simultaneo
GeSi nanostructures self-assembled on Si substrates have been of great interest not only to understand the fundamental physics during the heteroepitaxial growth,but also for the potential applications