【摘 要】
：
Compared with a-Si:H films,nc-Si:H films possess many desirable properties such as high conductivity,high transport factor,low activation energy,high photo-
【机 构】
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Department of Physics and Electrical Engineering,Hanshan Normal University,Chaozhou 521041,China
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
Compared with a-Si:H films,nc-Si:H films possess many desirable properties such as high conductivity,high transport factor,low activation energy,high photo-absorption coefficient,and easy to dope [1].Using nc-Si:H films with high conductivity would replace a-Si:H films to overcome the Staebler–Wronski effect,improving diffusion length and mobility so as solar cell conversion efficiency will be improved and the cost will be decreased [2].In this article,the effects of thermal annealing on structural,optical and electronic properties of boron-doped nanocrystalline silicon films were reported.
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