【摘 要】
：
Of various simiconductors used in photoelectrochemical applications,hematite (α-Fe2O3) has attracted a great of attentions due to its optimum band gap (2.0-2.2 eV) and the abundance of its component e
【机 构】
：
School of Environmental Science & Engineering,Nanjing University of Information Science & Technology
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Of various simiconductors used in photoelectrochemical applications,hematite (α-Fe2O3) has attracted a great of attentions due to its optimum band gap (2.0-2.2 eV) and the abundance of its component elements for low-cost practical applications.[1-3] To improve the efficiency of photogenerated charge collection of hematie,doping,morphological control or both are universally adopted.[3] Recently,the conception of oxide-on-metal inverse catalysts has been introduced by Fu and coworkers.[4-5]
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