Plasma-enhanced Atomic layer deposition Applications for nanoscale devices and prospects

来源 :等离子体催化与能源材料应用研讨会(ISPCEM2012) | 被引量 : 0次 | 上传用户:xiaoyuerhaha
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Due to various benefits such as atomic level thickness control and excellent conformality,atomic layer deposition (ALD) is expected to play an important role in future device fabrication.Especially,plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than conventional thermal ALD.This low temperature process makes PE-ALD more attractive for emerging nanoscale device fabrication.In addition,since ALD is surface-sensitive deposition technique,surface modification by plasma exposure can be used to alter nucleation and adhesion.In this presentation,several examples of PE-ALD processes for various applications such as semiconductor/display devices fabrication will be presented.
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