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基于缺陷调控的半导体GaAsSb中电子的自旋极化率研究
【机 构】
：
红外物理国家重点实验室中国科学院上海技术物理研究所,上海,200083
【出 处】
：
第二十届全国半导体物理学术会议
【发表日期】
：
2015年7期
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