【摘 要】
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As choice for voltage-driven magnetic recording devices,magnetoelectric(ME)materials hold the promise to build next-generation memory with high storage capacity
【机 构】
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KeyLaboratoryofWideBandgapSemiconductorTechnologySchoolOfMicroelectronics,XidianUniversity,2SouthTai
【出 处】
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第十五届全国电介质、材料与应用学术会议
论文部分内容阅读
As choice for voltage-driven magnetic recording devices,magnetoelectric(ME)materials hold the promise to build next-generation memory with high storage capacity,ultrafast access speed,low energy dissipation and non-volatility.Since natural single-phase systems rarely show a prominent room temperature ME effect,great effort had been devoted to the design and fabrication of ME composites.Recently,Lu et al.proposed epitaxial multilayered nanodot arrays,i.e.0-0 nanocomposite via a stencil assisted direct epitaxy process; it was designed to combine the features of 2-2 and 1-3 structures with good control of component assembly and confined lateral size to reduce substrate clamping.A clear coupling effect was found in these tiny nanodots,indicating great potential as a model system for further investigation of ME materials and for making device prototypes.
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