【摘 要】
：
Amongst the available amorphous semiconductors that are suitable for large-area and flexible electronics,IGZO has shown the most potential due to its high electron mobility and low-temperature film de
【机 构】
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School of Electrical and Electronic Engineering,University of Manchester,Manchester,United Kingdom
【出 处】
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2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
论文部分内容阅读
Amongst the available amorphous semiconductors that are suitable for large-area and flexible electronics,IGZO has shown the most potential due to its high electron mobility and low-temperature film deposition on glass or plastic substrates.So far,however,most efforts have been focused on IGZO-based thin-film transistors,with very limited attention on diodes despite them being basic circuit building blocks.Furthermore,the most speed-demanding component in many chips is the front-end diode to couple with antenna.In mobile phones and most wearable electronic gadgets,for example,transistors may work at MHz frequencies but the front-end diodes need to operate at up to 2.45 GHz to cover cellular communications,Bluetooth,GPS,and WiFi frequency bands.Even more ideally,the diodes need to be fast enough for the newest 4G LTE at 3.8 GHz and for 802.1 1a/h/j/r/ac WiFi channels at 5 GH-z.In this work,we demonstrate IGZO Schottky diodes to operate beyond 20 GHz on glass substrate and beyond 6 GHz on plastics.They are,to the best of our knowledge,the highest speed of thin-film electronic devices to date [1].Furthermore,we study the low-frequency noise of the Schottky diodes[2].The experiments reveal that the noise follows the mobility fluctuation model in the thermionic emission limited region and Hooges empirical theory in the series resistance limited region.
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