【摘 要】
：
The resonant tunneling photodiodes (RTDs) based on an A1GaAs/GaAs double barrier structure with an InGaAs absorption layer have simulated.Photons with the wavelength λ=1.54 μm lead to hole accumulatio
【机 构】
：
School of Information Science Technology, East China Normal University, China
【出 处】
：
2016年上海市研究生学术论坛——电子科学与技术
论文部分内容阅读
The resonant tunneling photodiodes (RTDs) based on an A1GaAs/GaAs double barrier structure with an InGaAs absorption layer have simulated.Photons with the wavelength λ=1.54 μm lead to hole accumulation close to the double barrier inducing a voltage shift of the current-voltage curve which strongly depends on the bias voltage.It was found that the peak current shifting to high voltage as the temperature decreased.In addition, the capacity-voltage (C-V) characteristic was simulated under different work temperatures and results showed the higher capacitance got at low bias (about 0.3 V) and room temperature.
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