Surface Alloying On Ti-Al Irradiated By High-Current Pulsed Electron Beam

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:redredlove
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Bulk Ti-Al alloys are extensively used in advanced aerospace engine and airframe components owing to their specific properties.
其他文献
Titanium dioxide (TiO2) films have been studied extensively due to their outstanding physical and chemical properties,and are used in such fields as photovoltaics,photocatalysis,electrochromics and se
高压直流供电系统从根本上解决了UPS系统存在的单点故障问题,使得整个供电系统的安全性和稳定性得到提高.本文将对目前240V高压直流供电系统与传统UPS供电系统进行对比分析,并对其主要技术指标和需要注意的问题进行探讨.
东北地区Vanguard传输网主用线路是租用电信2M线路,民航数据网提供的帧中继虚电路作为备份线路.但由于帧中继设备老化,网络所提供的带宽较低.无法时时保障备用线路正常.所以采用ATM网作为VG网络线路备份,以保障通信正常.
Heavily Nb-doped SrTiO3 (STNO) heteroepitaxial films have been successfully grown on (001) LaAlO3 (LAO) single crystal substrate by ion beam deposition method with a microwave ion source.
As semiconductor devices are scaled down,Cu interconnects become the best way due to its good electromigration resistance,and low electrical resistivity (1.67μΩ cm).
Nickel thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) by using metallorganic precursors and various reactant gases,H2 and NH3,including its plasma.
Cu-doped ZnO (CZO) thin films (0–3 mol% Cu content) were grown on GaN/Al2O3 substrates at 700 ℃ by the pulsed laser deposition technique.
We present an analysis of the ID-VG curve bending of graphene field-effect transistors (FETs) at the negative gate bias region.
For the various electronic devices such as microelectromechanical system (MEMS) devices,thin film transistor-liquid crystal display (TFT-LCD) devices,flexible display devices,etc.,dielectric thin film
Recently,technology development has emerged for low-cost and high-performance multi-axis sensor using polymer.Especially,NBR is one of primary materials because it has high dielectric property.