Si含量对HiPIMS复合RF磁控溅射制备CrSiN薄膜等离子体特性及力学性能影响

来源 :2018中国(重庆)国际表面工程论坛暨重庆第十四届表面工程技术论坛 | 被引量 : 0次 | 上传用户：mdyd888

【摘要】

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【作者】

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梁斐珂孙德恩李志伟 Wahyu Diyatmika

【机构】

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重庆大学材料科学与工程学院明志科技大学材料工程系暨材料工程所;明志科技大学薄膜科技与应用中心

【出处】

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2018中国(重庆)国际表面工程论坛暨重庆第十四届表面工程技术论坛

【发表日期】

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2018年9期

【关键词】

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氮化铬硅薄膜高功率脉冲磁控溅射硅含量等离子体力学性能

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论文部分内容阅读

高功率脉冲磁控溅射(High Power Impulse Magnetron Sputtering,HiPIMS)具有尖峰功率密度高,靶材离化率高,所制薄膜致密等优点,越来越受到研究人员的重视.本文通过HiPIMS复合RF磁控溅镀系统制备CrSiN薄膜,HiPIMS电源溅射Cr靶,射频电源溅射Si靶,改变射频功率得到不同Si含量的CrSiN薄膜.研究结果表明,HiPIMS脉冲功率密度达到了509W/cm2,等离子体光谱中存在Cr+;HiPIMS复合RF磁控溅镀系统制备的CrSiN薄膜晶粒随着Si含量增加而逐渐降低;硬度先增加最后减小,Si含量3.5at.％时硬度最高为25.4GPa;弹性模量一直减小;摩擦系数先增加后减小,这说明添加Si元素对CrSiN薄膜的显微结构和力学性能产生了很大的影响.

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Si含量对HiPIMS复合RF磁控溅射制备CrSiN薄膜等离子体特性及力学性能影响

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