Amorphous Metal Oxide/Carbon Nanotubes Hybrid Thin-Tilm Transistors: A New Avenue to High Speed Macr

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：dknight123lin

【摘要】

：

First, we report unique performance transistors based on a sol-gel processed indium zinc oxide/ single-walled carbon nanotubes (SWNTs) composite thin films.In the composite, SWNTs provide fast tracks

【作者】

：

Lei Liao

【机构】

：

Department of Physics,Wuhan University,China

【出处】

：

International Conference on Nanoscience & Technology,China 2

【发表日期】

：

2013年3期

【关键词】

：

Thin film transistor carbon nanotubes sol-gel high performance

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　　First, we report unique performance transistors based on a sol-gel processed indium zinc oxide/ single-walled carbon nanotubes (SWNTs) composite thin films.In the composite, SWNTs provide fast tracks for carrier transport to significantly improve the apparent field effect mobility.Specifically, the composite thin film transistors (TFTs) with SWNTs weight concentration in the range of 0 to 1% have been investigated with the field effect mobility reaching as high as 140 cm2/V·s at 1 wt% SWNTs while maintaining a high on/off ratio ~107.

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Amorphous Metal Oxide/Carbon Nanotubes Hybrid Thin-Tilm Transistors: A New Avenue to High Speed Macr

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