氮化硼纳米片P(VDF-HFP)复合膜的制备和储能性能

来源 :第一届全国物理力学青年学术研讨会 | 被引量 : 0次 | 上传用户:jgkffdkjkdsf
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  高脉冲电容器具有很高的功率密度,在消费电子、医用器械及军工等领域有广泛的应用.制备具有高介电常数、高击穿场强、高储能密度的介电复合材料是实现新型脉冲储能的重要基础.本研究中,利用氮化硼纳米片与聚(偏氟乙烯-六氟丙烯)复合,研究拉伸和多层结构设计对P(VDF-HFP)材料介电、储能性能的影响.当BNNSs 含量为0.5 wt%时,复合膜的介电常数可达35.5(100 Hz),此时损耗仅为0.058;当E=325 MV/m 时,复合膜的最大极化强度达4.05 μC/cm2,储能密度为5.63 J/cm3,比纯膜提高了34%,充放电效率为79%.
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