Graphene (G), a two-dimensional crystal of carbon atoms arranged in the honeycomb structure, shows extraordinary physical properties such as outstanding electronic mobility, higher than silicon or copper, it is one of the strongest materials found in nature, only comparable to diamond, and at the same time one of the softest, being a unique example of a metallic membrane.Furthermore, the electronic carriers in graphene propagate as a gas of relativistic, chiral, massless Dirac quasi-particles with unusual behavior in the presence of electric and magnetic fields.Because of these and other characteristics, graphene is considered as a serious contender for being the reference material for a post-CMOS technology.Nevertheless, the use of graphene for applications requires mass production of high quality material and also its transfer to insulating substrates.While epitaxial growth in SiC and CVD growth in metal surfaces have seen enormous progress, transfer techniques are still a major challenge and a limiting factor of the material quality.We have developed a new strategy for graphene growth on metallic Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties.This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by Raman spectroscopy, scanning tunnelling microscopy/spectroscopy (STM/STS), and angle resolved electron photoemission spectroscopy (ARPES).These experiments have shown the high structural and electronic qualities of this new composite, and the striking differences between this material from graphene obtained by previous methods.The SIA eliminates the need for the graphene transfer and also allows for an atomic control of the distance between the graphene and the metal gate (in this case, the Ru), opening doors for a new generation of graphene-based materials with tailored properties.