【摘 要】
：
The iron-doped amorphous carbon films (a-C∶Fe) and Al2O3 films were successfully prepared on n-type silicon substrates by pulsed laser deposition method at
【出 处】
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2012 Postdoctoral Symposium of China on Materials Science &a
论文部分内容阅读
The iron-doped amorphous carbon films (a-C∶Fe) and Al2O3 films were successfully prepared on n-type silicon substrates by pulsed laser deposition method at substrate temperatures ranging between RT to 400 ℃.The short-current, open-circuit voltage and the corresponding fill factor of the (a-C∶Fe)/Al2O3/Si cells were investigated in order to understand the effect of the deposition temperature on the photovoltaic (PV) properties.The (a-C∶Fe)/Al2O3/Si cells showed an interesting dependence of the (a-C∶Fe) and Al2O3 films deposition temperature and low deposition temperature is found to have a bad performance on PV effect.When the deposition temperature for a-C∶Fe and Al2O3 films are both near 350 ℃, the cells show the best PV performance with short-current density of 9.51 mA/cm2 and open-circuit voltage of 0.35V.The corresponding fill factor and energy conversion efficiency are 51% and 1.69% respectively.
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