Quantum Spin Hall State and Spin Current in Graphene Heterostructure Device

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户:liongliong559
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  Using density functional theory and tight-binding methods,we study the electronic structure,quantum spin-Hall phase and spin currents of graphene-Sb2Te3 heterostructure-based spintronic devices.
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