【摘 要】
：
Ⅲ-Ⅴ-semiconductor nanowires (NWs) have received intensive research efforts and have been proposed as the building blocks for furure photoelectronic devices such as photodetectors and solar cells, due
【机 构】
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National Lab for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Science
【出 处】
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International Conference on Nanoscience & Technology,China 2
论文部分内容阅读
Ⅲ-Ⅴ-semiconductor nanowires (NWs) have received intensive research efforts and have been proposed as the building blocks for furure photoelectronic devices such as photodetectors and solar cells, due to their unique physical and chemical characterizations.In particular, InAs NWs are widely explored as the channel material for high performance Field-Effect Transistors (FETs) because of their high electron mobility, narrow band gap for possible infirared detection(l-3μm), and their surface Fermi-level pinning in the conduction band, which lead to readily formation of low resistance ohmic contacts.In this paper, we study the photoresponse of individual epitaxial InAs NWs under illumination.
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