Ⅲ-Nitride semiconductor is a fantastic family system,composed of binary (AlN,GaN,InN),Ternary (InAlN,AlGaN and InGaN) and quaternary (InAlGaN) materials.Due to their excellent physical properties,the
多铁(Multiferroics)材料近年来引起了广泛的关注——"Areas to Watch",Science 318,1848 (2007).这类材料同时具有两种或两种以上的铁序(铁电序、铁磁/反铁磁序和铁弹序),并且不同铁序之间具有耦合效应,从而产生一些新的物理现象,相关研究丰富了人们对不同铁序的起源和相互作用的认识[1].
Understanding and control the magnetic domain wall (DW) propagation in ferromagnetic nanowires has become of utmost importance in future spintronic applications.In patterned ferromagnetic nanowires,pi