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5. Effect of Growth Parameters on the Properties of GaAsBi Studied Using Stationary Growth

Effect of Growth Parameters on the Properties of GaAsBi Studied Using Stationary Growth

来源 :第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain | 被引量 : 0次 | 上传用户：cin_long

【作 者】

：

Janne Puustinen Joonas Hilska Mircea Guina 

【机 构】

：

Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland

【出 处】

：

第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain

【发表日期】

：

2016年11期

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