Transmission electron microscopy study of oxygen precipitate in fast neutron irradiated CZ-Si

来源 :2015中国国际功能材料科技与产业高层论坛 | 被引量 : 0次 | 上传用户:giaaig
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  Oxygen precipitates generated in fast neutron irradiated Czochralski silicon(CZ-Si)after onestep annealing at 1100℃ for 1Oh in argon atmosphere.
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