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5. SEMICONDUCTOR PHYSICS AND DEVICES OF A WIDE BANDGAP SEMICONDUCTOR ZnO

SEMICONDUCTOR PHYSICS AND DEVICES OF A WIDE BANDGAP SEMICONDUCTOR ZnO

来源 :International Meeting on Frontiers of Physics 2009(第三届国际物理前沿 | 被引量 : 0次 | 上传用户：wangxunzhi520

【作 者】

：

Masashi Kawasaki 

【机 构】

：

WPI Advanced Research Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sen

【出 处】

：

International Meeting on Frontiers of Physics 2009(第三届国际物理前沿

【发表日期】

：

2009年4期

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