碳掺杂Ⅲ-氮族半导体材料磁性和电子结构研究

来源 :第十九届全国凝聚态理论与统计物理学术会议 | 被引量 : 0次 | 上传用户:huangweiririri
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  利用全势线性缀加平面波方法,同时采用修正的Becke-Johnson交换关联势,研究了碳掺杂Ⅲ-氮族半导体材料的电子结构和磁性。结果 表明当碳替代氮原子可使Ⅲ-氮族半导体成为半金属铁磁体,而且具有稳定的铁磁性基态;电子结构表明其铁磁性来源于载流子调制的双交换相互作用;同时还发现氮空位的存在将极大影响碳掺杂Ⅲ-氮族半导体的磁性。当碳替代阳离子位时,碳可使Ⅲ-氮族半导体具有非磁性的金属特性。
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