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Solution processed high performance InGaZnO thin film transistor (TFT) has been investigated.In this work, we emphasize on low temperature (about 250 ℃) and solution based fabrication route, which shows great potential to fabricate ZnO based thin film varying on organic flexible substrates with low cost.Via employing A12O3 as gate dielectric material, InGaZnO TFT exhibits a superior field effect mobility of 18.3 cm2 V-1s-1, accompanied by a drop of operating voltage achieving to around 1V.