Properties of High-k Yttrium Oxide Dielectric Films Prepared by Sol-Gel Process

来源 :Taishan Academic Forum on Graphene Nanomaterials and Biomedi | 被引量 : 0次 | 上传用户:zhang5832
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Yttrium oxide (Y2O3) dielectric films were grown on heavily-doped silicon (100) substrates by sol-gel process.Yttrium nitrate (Y(NO3)3·6H2O) was used as precursor material.This paper describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y2O3 films.These films were preheated at 200 ℃ for 15 min,and then annealed at different temperature,ranging from 300 ℃ to 600 ℃,for one hour.
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