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We present an analysis of the ID-VG curve bending of graphene field-effect transistors (FETs) at the negative gate bias region.
Charge Traps in Graphene Field-Effect Transistors
【摘 要】
：
We present an analysis of the ID-VG curve bending of graphene field-effect transistors (FETs) at the negative gate bias region.
【机 构】
：
SKKU Advanced Institute of Nanotechnology(SAINT), Department of Nano Science and Technology,Sungkyun
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
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