Growth of high density, wafer scale uniform horizontally aligned single walled carbon nanotubes from

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：between930

【摘要】

：

【作者】

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Cui guang Sun Rong Xiang Zikang Tang

【机构】

：

State Key Laboratory of Optoelectronic Materials and Technologies,School of Physics and Engineering,

【出处】

：

International Conference on Nanoscience & Technology,China 2

【发表日期】

：

2013年3期

【关键词】

：

single-walled carbon nanotubes high density dip-coating field-effect transistors

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　　Single-wallled carbon nanotubes (SWCNTs) are ideal materials for nanoelectronic devices due to their unique electronic properties, such as extremely high carrier mobility and currrent-carring capacity.However, low density and poor uniformity of the as-grown horizontally aligned SWCNTs still remain as obstacles towards the realistic applications of SWCNTs.

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Growth of high density, wafer scale uniform horizontally aligned single walled carbon nanotubes from

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