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5. Spatial and Tensor Resolved Piezo-spectroscopic Assessments of Stress Components in MOS Devices

Spatial and Tensor Resolved Piezo-spectroscopic Assessments of Stress Components in MOS Devices

来源 :The 2nd International Syposium on Innovations in Advanced Ma | 被引量 : 0次 | 上传用户：weiguoliaaaa

【作 者】

：

A.Leto A.A.Porporati M.Deluca W.Zhu G.Pezzotti 

【机 构】

：

Ceramic Physics Laboratory,Kyoto Institute of Technology,Matsugasaki,Sakyo-ku,Kyoto,606-8585,Japan

【出 处】

：

The 2nd International Syposium on Innovations in Advanced Ma

【发表日期】

：

2008年1期

【关键词】

：

Piezo-spectroscopy MOS devices silicon silica 

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