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在绝缘衬底上利用随机成核横向生长单晶锗
【机 构】
：
中国科学院半导体研究所集成光电子学国家重点实验室,北京,100083
【出 处】
：
第二十届全国半导体物理学术会议
【发表日期】
：
2015年7期
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