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5. Hydrogen trapping enhanced by ion induced damages in silicon

Hydrogen trapping enhanced by ion induced damages in silicon

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：zht336

【摘 要】

：

With the use of temperature programmed desorption (TPD),properties of hydrogen trapping in silicon during argon and hydrogen ion implantation have been studied.

【作 者】

：

Thomas C. Karahashi K. Angot T. Hamaguchi S. 

【机 构】

：

Osaka University, Center of Atomic and Molecular Technologies, 2-1 Yamadaoka, Suita, Osaka 565-0871,

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Temperature Programmed Desorption Hydrogen beam Etching Implantation 

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With the use of temperature programmed desorption (TPD),properties of hydrogen trapping in silicon during argon and hydrogen ion implantation have been studied.

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