Recent progress of ferroelectric field-effect transistors for nonvolatile memory applications

来源 :The 3rd International Symposium on Rare Earth Resource Utili | 被引量 : 0次 | 上传用户:kongxianghua
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  Ferroelectric memories have good application prospects in computer, aerospace and military industry because of many advantages such as low power consumption, high reading and writing speed, high endurance, high density, antiradiation, and non-volatility.Thus ferroelectric memories have attracted a great deal of attention and become one of the most promising and advanced nonvolatile memory technologies in use today.However, they have several fundamental failure problems, such as fatigue, retention loss and imprint, electrical breakdown, which limit their commercial applications.So, ferroelectric memories may become mainstream devices competitive with other types of nonvolatile memories only if do they overcome failure problems and achieve the necessary performance, reliability, and lifetime requirements.
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