一、序言 七十年代初科学院一0九厂用我所涂层的热解石墨基座再包硅,而后在外延中应用,取得了单片基座使用寿命两年之久的好结果。但因多种原因工作未能继续。1976年,我们根据对外延工艺的了解和国内外延基座存在的问题,即:“硅外延片几乎都有雾点,二极管和三极管的制管成品率很低”的状况,推荐使用热解石墨涂层外延基座,首先在辽阳第一晶体管厂进行试用,同时逐渐推广到全国务研究单位和半导体厂。经过一段时间的验证,普遍反应效果良好,使用寿命长,并制得了经铬酸腐蚀液处理后表面 First, the preface In the early 1970s, a hundred and nine factories with my pyrolytic graphite coating base coated with silicon, and then applied in the epitaxial, and achieved a single base life of good results for two years. However, for a variety of reasons the work failed to continue. In 1976, based on the understanding of epitaxial technology and the problems in the domestic and foreign research base, namely: “almost all of the silicon epitaxial wafers have a fog point, and the production yield of diodes and triodes is very low”, we recommend the use of pyrolytic graphite Coating epitaxial base, the first transistor plant in Liaoyang trial, at the same time gradually extended to the national research units and semiconductor plant. After a period of validation, the general response to the good results, long life, and prepared by the chromic acid etching solution after the surface