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Evaluation of acceptor binding energy of nitrogen doped ZnO thin films grown by dielectric barrier d
【机 构】
:
Electronic Materials Center,Korea Institute of Science and Technology,Seoul 136-791,Republic of Kore
【出 处】
:
第六届国际氧化锌及相关材料研讨会
【发表日期】
:
2010年4期
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