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GaSb是Ⅲ-Ⅴ族化合物半导体材料,其禁带宽度为0.72eV,是优良的电子和光电子器件衬底材料.可以用于光纤通讯、太阳能电池[1]、红外探测器[2]以及发光二极管[3]等领域.制备GaSb单晶常用的方法有VB法和LEC法.
VB法生长2英寸高质量GaSb单晶研究
【摘 要】
：
GaSb是Ⅲ-Ⅴ族化合物半导体材料,其禁带宽度为0.72eV,是优良的电子和光电子器件衬底材料.可以用于光纤通讯、太阳能电池[1]、红外探测器[2]以及发光二极管[3]等领域.制备
【机 构】
：
中国电子科技集团公司第四十六研究所
【出 处】
：
第17届全国晶体生长与材料学术会议
【发表日期】
：
2015年8期
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