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5. Transferring Porous Layer from InP Wafer Based on the Disturbance

Transferring Porous Layer from InP Wafer Based on the Disturbance

来源 :第6届纳米操纵、制造与测量国际会议( the International Conference IEEE 3M-NANO | 被引量 : 0次 | 上传用户：t_bear

【作 者】

：

Yang Zhang Liang Cao Xiangyu Chai Kaihua Liang Zhankun Weng Zhengxun Song Hongmei Xu Zuobin Wang 

【机 构】

：

International Research Centre for Nano Handling and Manufacturing of China,Changchun University of S

【出 处】

：

第6届纳米操纵、制造与测量国际会议( the International Conference IEEE 3M-NANO

【发表日期】

：

2016年5期

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