【摘 要】
：
Nanocapacitors are the key component in resistive random access memory (RRAM) for next generation nanometre scaled electronic devices.It is believed that bottom up approach is a cost effective techniq
【机 构】
：
School of Materials Science and Engineering,The University of New South Wales,Australia
【出 处】
：
4th China - Australia Symposium for Materials Science(第4届中国-
论文部分内容阅读
Nanocapacitors are the key component in resistive random access memory (RRAM) for next generation nanometre scaled electronic devices.It is believed that bottom up approach is a cost effective technique compared with the other nanotechnologies.In this work, we report a novel procedure for fabricating high performance nanocapacitors by using oxide nanocubes as colloidal building blocks.
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