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我们在有和无离子束辅助两种情形下，在双轴织构Ｎｉ基底上制备了ＣｅＯ２薄膜，结果表明，无离子束辅助沉积时，薄膜表现出（１１１）取向，在离子能量为２４０ｅＶ，束流为２００μＡ／ｃｍ２，基片温度为３６０℃的条件下沉积的ＣｅＯ２薄膜呈现出良好的立方织构．另外，我们分析了薄膜应力随温度和离子辅助条件的变化关系，结果表明，离子束轰击可以减小薄膜应力，在３６０℃附近薄膜应力几乎被完全弛豫
We prepared CeO2 thin films on biaxially textured Ni substrates with or without ion beam assisted deposition. The results show that the (111) orientation of the thin films shows the (111) orientation without ion beam assisted deposition, and at an ion energy of 240 eV, The CeO2 film deposited at a beam current of 200μA / cm2 and a substrate temperature of 360 ℃ exhibited a good cubic texture. In addition, we analyzed the relationship between the film stress and the temperature and ion-assisted conditions. The results show that the ion beam bombardment can reduce the film stress. The film stress is almost completely relaxed at 360 ℃