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EFFECTS OF Si in SiXSb2Te3 FILMS FOR C-RAM
【机 构】
：
InstituteofMicrostructureandPropertyofAdvancedMaterials,BeijingUniversityofTechnology,Beijing100124,
【出 处】
：
2009第十三届北京分析测试学术报告会
【发表日期】
：
2009年11期
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