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衬底温度对非晶硅薄膜的生长以及异质结电池中晶体硅表面钝化起到至关重要的作用。实验中采用等离子体增强化学气相沉积技术，在晶体硅表面双面沉积本征氢化非晶硅薄膜，采用等离体增强化学气相沉积技术制备了具有不同微结构、异质结界面形貌等特征的氢化非晶硅薄膜。
衬底温度对异质结电池中晶体硅表面钝化的影响
【摘 要】
：
衬底温度对非晶硅薄膜的生长以及异质结电池中晶体硅表面钝化起到至关重要的作用。实验中采用等离子体增强化学气相沉积技术，在晶体硅表面双面沉积本征氢化非晶硅薄膜，采用等离体增强化学气相沉积技术制备了具有不同微结构、异质结界面形貌等特征的氢化非晶硅薄膜。
【作 者】
：
【机 构】
：
Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technol
【出 处】
：
SNEC 第九届(2015)国际太阳能产业及光伏工程(上海)论坛
【发表日期】
：
2015年3期
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