Laser method for simulating the transient radiation effects of semiconductor

来源 :LIMIS 2016——The 4th International Symposium on Laser Interac | 被引量 : 0次 | 上传用户:xyc76821
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  Transient radiation such as gamma or X ray generally degrades the performance of semiconductor devices and circuits.Tradiational methods to study their characteristics under irradiation rely on giant linear accelerator (LINAC) and flash x-ray (FXR) facilities,which are always over-burdened and parameters are difficult to be adjusted.
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