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采用阳极氧化法对Ta、Ae两种栅电极进行了氧化物获得及性能研究。 低阻Ta膜的获得是至关重要的,我们采用直流磁控溅射法详细研究了降低Ta膜电阻的条件,并获坡度可达30-45°的蚀刻条件。 阳极氧化膜的厚度可精确地用工作电压控制,其性能则与工作电流、结束方式紧密相关。MOx/SiNx双层膜厚控制匹配与TFT性能关系甚大,在权衡矩阵成品率与性能方面尚有工作要做。实验发现,在严格控制实验条件下,可使TFT的场迁移率得以改善,相应开态电流有所增长。
Anodic oxidation of Ta and Ae gate electrodes were obtained oxide performance and performance. Obtaining the low-resistance Ta film is crucial. We studied the conditions for lowering the resistance of the Ta film by DC magnetron sputtering in detail, and obtained etching conditions with a slope of up to 30-45 °. The thickness of the anodized film can be accurately controlled by the operating voltage, and its performance is closely related to the operating current and the ending mode. MOx / SiNx double-layer thickness control matching has a great relationship with TFT performance, and there is still work to be done in balancing the matrix yield and performance. The experimental results show that the field mobility of the TFT can be improved and the corresponding on-state current increases under the strict control of experimental conditions.