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32K字8位(简称“328”)磁芯存贮器模块,可作为中大型数字电子计算机主贮存器的基本组成单元,可按字节扩充至72位(64数码,8位海明码)。“328”磁芯存贮器模块的存贮元件为φ0.55(mm)宽温磁芯,驱动电路采用脉冲变压器耦合的浮动开关电路,读出放大器是线性集成电路,大电流开关二极管选用组合结构的二极管阵列,逻辑电路为标准双列直插封装、单D规模、平均级延时为t_(pd)≤10ns的TTI系列集成电路。在设计试制过程中,对“328”磁芯存贮器模块的可靠性、可用性、可生产性、可维护性及降低成本方面做了些工作,使“328”模块初步具有速度快、驱动电压低、可靠性高、成本低的特点。为磁芯存贮器的标准化、通用化提供条件。一、结构与组装目前,国内的2 1/2 D3W存取方案所采用的结构,基本上可分为两种:大板(或曰插件式)结构和体结构。这两种结构形式各有其优点,但考虑到目前国内电子元件水平及存贮器的生产水平,决定选用大、小板结合的抽屉式结构(以下称“单元”),见图一。即磁心板采用大板,外围电路采用双插头、长条形的小插件板,见图二。这种结构有如下几点好处:
32K words 8-bit (“328”) core memory module can be used as a basic unit of large and medium-sized digital computer main memory and can be expanded to 72 bits (64-digit, 8-digit Hamming code) by byte. “328” core memory module storage element is φ0.55 (mm) wide temperature core, the drive circuit using pulse transformer coupled floating switch circuit, the sense amplifier is a linear integrated circuit, a combination of high current switching diodes Structure of the diode array, the logic circuit for the standard dual in-line package, single-D scale, the average delay T_ (pd) ≤ 10ns TTI series integrated circuits. In the course of design and trial production, some efforts have been made on the reliability, availability, manufacturability, maintainability and cost reduction of the “328” magnetic core memory module so that the “328” module initially has the advantages of fast speed, Low, high reliability, low cost. For the standardization of magnetic memory, universal conditions. First, the structure and assembly At present, the domestic 2 1/2 D3W access structure used in the program, basically can be divided into two types: large board (or plug-in) structure and body structure. However, considering the current level of domestic electronic components and the production level of memory devices, it is decided to use a combination of large and small plate-type drawer structure (hereinafter referred to as “unit”), as shown in Figure 1. That is, the core board with a large board, the peripheral circuit with dual plugs, long strip of small plug-in board, see Figure II. This structure has the following advantages: