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为了使Ga-As-PCl_3-H_2外延系统生长的掺碲GaAs_(1-x)Px(x=0.4)形成P—n结,发现采用Ga-P-Zn三元合金源来扩散锌是有效的。扩散是用安瓶扩散法进行,扩散源的组分可由Ga-P-Zn三元合金相图算出。这种扩散源具有高的磷过压,而使扩散系数较小,制得更平整的P-n结。扩散深度与结平整性可能与GaAs_(1-x)Px表面形态和结晶完善度的关系较小。从电容—电压测量结分布是一种突变—缓变构成的混合
In order to form a P-n junction with tellurium-doped GaAs_ (1-x) Px (x = 0.4) grown by Ga-As-PCl_3-H_2 epitaxy system, it is found that it is effective to use Ga-P-Zn ternary alloy source to diffuse zinc . The diffusion is carried out by ampoule diffusion method, and the components of the diffusion source can be calculated from the phase diagram of the Ga-P-Zn ternary alloy. This diffusion source has a high phosphorus overvoltage, leaving the diffusion coefficient smaller, resulting in a more smooth P-n junction. Diffusion depth and flatness may have little to do with the surface morphology and crystallinity of GaAs_ (1-x) Px. From the capacitance - voltage measurement junction distribution is a sudden change - slowly changing the composition of the mixture