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本文借助Comsol和Matlab软件模拟了直流磁控溅射圆平面靶系统的磁场分布和荷电粒子分布,对不同磁场强度和阴极电压条件下的荷电粒子分布进行了模拟分析,通过比较靶面离子流密度分布曲线发现:当磁场强度增强时,靶面离子流密度分布曲线会变得更加陡窄;当阴极电压变化时,靶面离子流密度分布曲线几乎没有变化。说明靶材的刻蚀形貌会随磁场强度增强而变窄,而阴极电压变化对靶材的刻蚀形貌没有影响。上述结论对直流磁控溅射工艺参数优化具有一定的理论指导意义。
In this paper, the magnetic field distribution and charged particle distribution of DC magnetron sputtering circular planar target system are simulated by Comsol and Matlab software. The distribution of charged particles under different magnetic field strength and cathode voltage is simulated. By comparing the target ion The results of the current density distribution curve show that when the magnetic field intensity increases, the ion current density distribution curve of the target surface becomes more steep. When the cathode voltage changes, the ion current density distribution curve of the target surface hardly changes. It shows that the etching morphology of the target narrows with the increase of the magnetic field intensity, while the change of the cathode voltage has no influence on the etching morphology of the target. The above conclusion has certain theoretical significance for the optimization of DC magnetron sputtering process parameters.