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电子束蒸发在硅衬底上的多晶铝膜多孔型阳极氧化得到的多孔列阵排布与体材料单晶 铝氧化结果比较，有序度存在很大差异，导致这种差异的原因，除了氧化时间、应用电压、电解液等 电化学参数外，新引入的结晶度将作为一重要因数影响自组织过程．结晶度的影响主要反映在晶粒 间界区域相比于晶粒内部存在的铝原子浓度和阳极氧化反应速度涨落，这种涨落将通过干扰孔底 电场的分布，对自组织过程产生微扰，由于微扰具有实时和随机性质，将使铝膜阳极氧化不再象体 材铝那样，可以通过单一延长时间来最终改善孔排布的有序度．
Electron beam evaporation of polycrystalline aluminum film on a silicon substrate porous anodized porous array arrangement obtained with the bulk material single crystal aluminum oxidation results, there is a big difference in the degree of order, leading to this difference in the reason, in addition to Oxidation time, application voltage, electrolyte and other electrochemical parameters, the newly introduced degree of crystallinity will be an important factor affecting the self-organization process. The influence of crystallinity is mainly reflected in the presence of aluminum atoms and the anodic oxidation reaction rate fluctuation in the grain boundary region compared with the grain interior. Such fluctuations will interfere with the distribution of the electric field at the bottom of the pores and produce a slight Due to the real-time and random nature of the perturbation, the anodization of the aluminum film will no longer be as aluminum as the body material, and the order of the hole arrangement can be finally improved by a single extension of time.