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一、概述我们采用电分析和显微分析相结合的方法,在大量解剖分析失效的硅平面大功率晶体管D402、D10管芯的基础上,对表面引起失效及体内引起失效的机理进行了较为详细的分析和讨论.D402和D10晶体管是npn型硅平面低频大功率管,其主要技术性能:P_(CM)为2～5W;I_(CM)为1A;BV_(ceo)≥100V(I_C=0.5mA):I_(ceo)≤0.1mA(V_(ce)=20V);V_(ces)≤0.6V(I_c=0.5mA,I_b=0.05mA).其主要用途是作十二英寸、十四英寸黑白电视机伴音功放,以及部分电源推动和激励,其外壳采用D-1C管座封装,
First, an overview We use a combination of electrical analysis and microscopic analysis of a large number of anatomical failure analysis of silicon planar high-power transistors D402, D10 die, on the surface caused by failure and in vivo mechanism of failure were more detailed D402 and D10 transistors are npn-type silicon planar low-frequency high-power transistors, the main technical performance: P_ (CM) of 2 ~ 5W; I_ (CM) of 1A; BV ceo ≥ 100V (I_C = 0.5 mA): I_ (ceo) ≤0.1mA (V_ (ce) = 20V); V_ (ces) ≤0.6V (I_c = 0.5mA, I_b = 0.05mA) .Its main purpose is to make twelve inches and fourteen inches Black and white TV sound amplifier, as well as some power to promote and encourage the use of its shell D-1C header package,