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为了减少经典SOI器件的自加热效应,首次成功地用外延方法制备以Si3N4薄膜为埋层的新结构SOSN,用HRTEM和SRP表征了SOI的新结构.实验结果显示,Si3N4层为非晶状态,新结构的SOSN具有良好的结构和电学性能.对传统SOI和新结构SOI的MOSFETs输出电流的输出特性和温度分布用TCAD仿真软件进行了模拟.模拟结果表明,新结构SOSN的MOSFET器件沟道温度和NDR效益都得到很大的降低,表明SOSN能够有效地克服自加热效应和提高MOSFET漏电流.
In order to reduce the self-heating effect of classical SOI devices, a new structure SOSN with Si3N4 buried layer was epitaxially grown successfully for the first time, and the new structure of SOI was characterized by HRTEM and SRP.The experimental results show that the Si3N4 layer is amorphous, The new structure of SOSN has good structural and electrical properties.The output characteristics and temperature distribution of the output currents of the MOSFETs of the traditional SOI and the new structure SOI are simulated with the TCAD simulation software.The simulation results show that the MOSFET structure of the new structure SOSN channel temperature And NDR benefits have been greatly reduced, indicating that SOSN can effectively overcome the self-heating effect and increase the MOSFET leakage current.